Indium Doping of CdTe Grown by Molecular Beam Epitaxy

In-situ Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by re ection high-energy electron di raction (RHEED). We pointed out that the strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay const...

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

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Ferromagnetism of Mn/Ge Multilayers Grown by Molecular Beam Epitaxy

We report on novel ferromagnetic Mn/Ge multilayers for spintronics applications investigated both experimentally and theoretically. Two Mn/Ge multilayers are grown on GaAs (001) substrates by molecular beam epitaxy. The period of each multilayer consists of an Mn layer of varying thickness (0.6 and 5 Å) and a 10 Å thick Ge spacer layer. From temperaturedependent magnetization and hysteresis loo...

Graphitic carbon grown on fluorides by molecular beam epitaxy

We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further s...